3D IC and Through-Silicon-Via (TSV) Reliability

this report shows the survey of reliability of 3D IC manufactory and its robustness. Firstly, we consider the reliability of the manufactory of 3D IC. The process-induced thermal stresses around TSVs raise serious reliability issues such as Si cracking and performance degradation of devices. Finite element analysis (FEA) combined with analytical methods is introduced to investigate this issue, suggestions are also made from the analysis. Then we consider the robustness of 3D IC during its normal operation. Thermomigration and Electromigration are investigated. For thermomigration, two papers on simulating 3D IC temperature are introduced, one on circuit level, the other on package level. And a possible solution is suggested. For electromigration, EM lifetime modelling of TSV structure is introduced. The impact of TSV stress on EM lifetime of BEOL wires is also suggested. Keywords— 3D-IC, TSV, Thermomigration, Electromigration,